FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com 1 FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt features ? scis energy = 335mj at t j = 25 o c ? logic level gate drive ? qualified to aec q101 ? rohs compliant applications ? automotive lgnition coil driver circuits ? coil on plug applications package jedec to-252 d-pak gate emitter collector december 2011
f gd3440g2_f085 ecospark ? 2 26.9 a i c1 10 collector c urrent continuous, at v ge = 4.0v , t c = 110c 25 a v gem gate t o emitter voltage continuous 10 v p d p ower dissipation total, at t c = 25c 166 w power dissipation derating, for t c > 25 o c1 . 1 w / o c t j oper ating junction temperature range -40 to +175 o c t st g s torage junction temperature range -40 to +175 o c t l max. le ad temp. for soldering (leads at 1.6mm from case for 10s) 300 o c t pk g max. le ad temp. for soldering (package body for 10s) 260 o c esd electrostatic discharge voltage at100pf, 1500 ? ?
FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com 3 electrical characteristics t a = 25c unless otherwise noted dynamic characteristics switching characteristics thermal characteristics notes: 1: self clamping inductive switching energy(e scis25 ) of 335mj is based on the test conditions that is starting t j =25 o c; l=3mhy, i scis =15a,v cc =100v during inductor charging and v cc =0v during the time in clamp . 2: self clamping inductive switching energy (e scis150 ) of 195mj is based on the test conditions that is starting t j =150 o c; l=3mhy, i scis =11.4a,v cc =100v during inductor charging and v cc =0v during the time in clamp . symbol parameter test conditions min typ max units q g(on) gate charge i ce = 10a, v ce = 12v, v ge = 5v -24-nc v ge(th) gate to emitter threshold voltage i ce = 1ma, v ce = v ge, t j = 25 o c 1.3 1.7 2.2 v t j = 150 o c 0.75 1.2 1.8 v gep gate to emitter plateau voltage v ce = 12v, i ce = 1 0 a - 2 . 8 - v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 v ge = 5v, r g = 1k t j = 25 o c, -1.04 s t rr current rise time-resistive - 2.0 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, l = 1mh, v ge = 5v, r g = 1k i ce =6.5a, t j = 25 o c, - 5 . 3 1 5 s t fl current fall time-inductive - 2.3 15 s r jc thermal resistance junction to case - - 0.9 o c/w
FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com 4 typical performance curves figure 1. self clamped inductive switching current vs. time in clamp 10 100 1000 1 10 100 scis curves valid for v clamp voltages of <430v t j = 150 o c t j = 25 o c t clp , time in clamp ( s ) i scis , inductive switching current (a) r g = 1k , v ge = 5v, v ce = 100v figure 2. 03691215 0 10 20 30 scis curves valid for v clamp voltages of <430v t j = 150 o c t j = 25 o c l, inductance ( mhy ) i scis , inductive switching current (a) r g = 1k , v ge = 5v, v ce = 100v self clamped inductive switching current vs. inductance figure 3. -75 -50 -25 0 25 50 75 100 125 150 175 1.00 1.05 1.10 1.15 1.20 i ce = 6a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c ) collector to emitte r on-state voltage vs. junction temperature figure 4. -75 -50 -25 0 25 50 75 100 125 150 175 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 i ce = 10a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4.0v v ge = 3.7v v ce , collector to emitter voltage (v) t j , junction temperture ( o c ) collector to emitte r on-state voltage vs. junction temperature figure 5. 01234 0 10 20 30 t j = -40 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 6. collector to em itter on-state voltage vs. collector current 01234 0 10 20 30 t j = 25 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a)
FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com 5 figure 7. 01234 0 10 20 30 t j = 175 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 8. 1234 0 10 20 30 t j = -40 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v ce = 5v i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) transfer characteristics figure 9. 25 50 75 100 125 150 175 0 10 20 30 i ce , dc collector current (a) t c , case temperature ( o c ) v ge = 4.0v dc collector current vs. case temperature figure 10. threshold voltage vs. junction tem perature -50 -25 0 25 50 75 100 125 150 175 1.0 1.2 1.4 1.6 1.8 2.0 v ce = v ge i ce = 1m a v th , threshold voltage (v) t j , junction temperature ( o c ) figure 11. -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 v ces = 250v v ces = 300v v ecs = 24v t j , junction temperature ( o c ) leakage current ( a ) leakage current vs. junction temperature figure 12. 25 50 75 100 125 150 175 0 2 4 6 8 10 12 resistive t on inductive t off resistive t off switching time ( s ) t j , junction temperature ( o c ) i ce = 6.5a, v ge = 5v, r g = 1k switching time vs. junction temperature typical performance curves (continued)
FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com 6 figure 13. 5 10152025 0 400 800 1200 1600 2000 f = 1mhz v ge = 0v c res c oes c ies v ds , drain to source voltage ( v ) capacitance (pf) capacitance vs. coll ector to emitter voltage figure 14. 0 10203040506070 0 2 4 6 8 10 i ce = 10a, t j = 25 o c v ce = 6v v gs , gate to emitter voltage(v) q g , gate charge(nc) v ce = 12v gate charge figure 15. 10 100 1000 6000 380 400 420 440 t j = 25 o c t j = -40 o c t j = 175 o c i cer = 10ma r g , series gate resistance ( ) bv cer , breakdown voltage (v) break down voltage vs. series gate resistance figure 16. 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 0.01 0.02 0.05 0.1 single pulse normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 d = 0.50 0.2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 igbt normalized transient thermal impedance, junction to case typical performance curves (continued)
test circu it and waveforms fig ure 17. inductive switching test circuit figure 18. t on and t of f sw itching test circuit figure 19. energy test circuit figure 20. energy waveforms r g g c e v cc l pu lse gen dut r g = 1k ? + - v cc dut 5v c g e l oad r or l t p v ge 0.01 ? l i scis + - v ce v cc r g va ry t p t o obtain required peak i scis 0v dut g c e v cc v ce bv ce s t p i scis t av 0 FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt 7 @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com
8 mechanical dimensions 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pa k dimens ions in millimeters FGD3440G2_f085 ecospark ? 2 335mj, 400v, n-channel ignition igbt @2011 fairchild semiconductor corporation FGD3440G2_f085 rev. b www.fairchildsemi.com
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55
|
